Work

Understanding Light‐Soaking Effects in Silicon Solar Cells by Considering Charge Carrier‐Enhanced Atomic Hydrogen Release

Year: 2026

Type: article

Abstract: ABSTRACT This study investigates the dynamics of hydrogen in p‐type silicon semiconductors, with a particular focus on the influence of excess minority carriers on hydrogen reactions. Our findings reveal that the presence of these carriers significantly increases atomic hydrogen concentration due to enhanced acceptor‐hydrogen dissociation. We propose a unified model that effectively describes the behavior of hydrogen species under both thermal equilibrium and non‐equilibrium conditions in both B‐ and Ga‐doped Si. This model provides a coherent explanation for phenomena associated with Light‐ and Elevated Temperature‐Induced Degradation (LeTID) during dark annealing and light soaking processes. We believe that any light soaking process in the photovoltaic industry causes hydrogen‐related effects, even if unintentional. This understanding is pivotal for optimizing light soaking processes, ultimately improving defect and surface passivation and enhancing the efficiency of silicon solar cells.

Source: Progress in Photovoltaics Research and Applications

DOI: 10.1002/pip.70112

Authors: Wolfram Kwapil, Jonas Schön, Benjamin Hammann, Fabian T. Thome, Stefan W. Glunz

Institutions: University of Freiburg, Fraunhofer Institute for Solar Energy Systems

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $5,150