Work

Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0315801

Authors: Jinbing Wang, Maojun Wang, Pengfei Wang, Jin Wei, Jinyan Wang, Xun Zhang, Yuxia Feng, Na Sun, Xinyi Pei, Jiandong Ye, Kevin J. Chen, Han Yang, Bo Shen

Institutions: Peking University, Beijing University of Technology, Nanjing University, Hong Kong University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5762108442

OpenAlex ID: W7160204532

FWCI:

Cites: 27

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