Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps
Year: 2026
Type: article
Source: Semiconductors
Authors: Xiang-Yu Liu, Li-E Cai, Yi-Fei Chen, Zhi-Yu Ma, Da Feng, Hai-Feng Lin, Chuan-Tao Sun, Cheng Zai-Jun, Lin Hai-Feng, Rong-Sheng Zheng
Institution: Xiamen University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7160243272