Work

Carrier Engineering via Al and Ga Doping Enhances Thermoelectric Properties in Si-Rich Higher Manganese Silicide

Year: 2026

Type: article

Source: ACS Applied Energy Materials

DOI: 10.1021/acsaem.6c00793

Authors: Dino Ashmi R. V., Arthiya Sathya Elango, Uday Kumar M., Reeshma Rameshan, Surafel Shiferaw Legese, Kamanio Chattopadhyay, Bhuvanesh Srinivasan, Alain Largeteau, Mythili Prakasam, Suresh Perumal

Institutions: Indian Institute of Technology Hyderabad, Indian Institute of Science Bangalore, Indian Institute of Technology Madras, Centre National de la Recherche Scientifique, Université de Bordeaux, Institut de Chimie de la Matière Condensée de Bordeaux, Institut Polytechnique de Bordeaux

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Indo-French Centre for the Promotion of Advanced Research, Science and Engineering Research Board

Awards: G2910566008, G754707159

OpenAlex ID: W7160641649

FWCI:

Cites: 67

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