Work

Epitaxial growth of β -bismuthene on Sb 2 Te 3

Year: 2026
Type: article
Abstract: Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly distinctive niche due to their enhanced spin-orbit interaction. Here, we present an epitaxial heterointerface formed by beta-bismuthene on Sb2Te3, a well-known three-dimensional topological insulator. Using scanning tunneling microscopy, we systematically investigated the effects of Bi coverage and substrate temperature on nucleation processes, island morphology, and atomic structure. In addition, substrate-induced defects were identified throughout the bismuthene lattice.
Language: English
Open Access status: green
OpenAlex ID: W7160856712
FWCI:
Cites: 58
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Related to: 10