Work

Electron Transport and Dislocations in Heavily Doped and Co‐Doped n‐Type 4H‐SiC

Year: 2026

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.70186

Authors: Xinyu Xie, Yafei Kong, Lingling Xuan, Tianqi Deng, Lingmao Xu, Deren Yang, Xiaodong Pi

Institution: Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7160858974

FWCI: 1.766

Cites: 40

Cited by: 1

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