Work

Evolution of defect states in C2H2-doped GaN:C studied by optical deep-level transient spectroscopy

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0331068

Authors: Anna Honda, Momoko Inayoshi, Noriyuki Taoka, Wakana Takeuchi, Takeshi Kato, Hirotaka Watanabe, Yoshio Honda

Institutions: Nagoya University, Aichi Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Tatematsu Foundation, Ministry of Education, Culture, Sports, Science and Technology, Research Foundation for the Electrotechnology of Chubu

Award: G7836606751

OpenAlex ID: W7160877293

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Cites: 32

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