Work

Simultaneous Substrate Debonding and Device Annealing of Flexible a‐IGZO Thin‐Film Transistors on Colorless Polyimide via Single‐Shot Xenon Flash Lamp Irradiation

Year: 2026

Type: article

Abstract: This study demonstrates a single-step xenon flash lamp debonding (XFLD) process that simultaneously enables mechanical release and ultrafast annealing of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on colorless polyimide (CPI). Rapid photothermal absorption by a Molybdenum (Mo) light-absorption layer (LAL) induces instantaneous CPI decomposition for clean debonding from glass carriers, while concurrently providing sufficient thermal activation to enhance device performance. Following XFLD, the TFTs exhibit increased drain current, a positive threshold voltage shift, and reduced off current, indicating effective channel activation. Hydrogen diffusion from the CPI passivates oxygen-vacancy-related defects in the a-IGZO layer, improving carrier transport and operational stability. Spectroscopic analyses confirm reduced vacancy states and reinforced C─Cl bonding in the polymer gate dielectric without chemical damage. The resulting devices show excellent transparency and maintain stable characteristics over 1000 bending cycles. Overall, the scalable XFLD process offers a promising route for integrating substrate debonding and ultrafast thermal activation in high-performance flexible and wearable electronics.

Source: Small Methods

DOI: 10.1002/smtd.70704

Authors: Yun Hyeok Jeong, In Ho Kim, Sang Jik Kwon, Min‐Kyu Park, Eou‐Sik Cho

Institution: Gachon University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: green

Funders: Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology