Work

Low resistive GaN-based tunnel junctions grown at low temperatures in triple-junction LEDs

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0324604

Authors: Satoshi Yamaguchi, Hinata Uda, Kazuki Osada, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Takayuki Tanaka

Institution: Meijo University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Departure from conductivity control with impurity doping in widegap semiconductors

OpenAlex ID: W7160985567

FWCI:

Cites: 33

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