Work

Doping-induced passivation of the Cu2ZnSnS4/MoS2 back interfaces

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0321704

Authors: Liangli Chu, Jian Guo, Linfeng Yu, Fanrong Lin, Zhuhua Zhang

Institutions: State Key Laboratory of Mechanical Structure Mechanics and Control, Nanjing University of Aeronautics and Astronautics

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Basic Research Program of Jiangsu Province, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities

Awards: G1250553868, G1824975227, G2998189562, G3131528248, G4101351938, G4247571839, G4614991566, G5492172336, G8707690486

OpenAlex ID: W7161004243

FWCI:

Cites: 65

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