Work

Thermal redistribution of valence-band holes and optical polarization in AlGaN (225–230 nm) far-UVC quantum wells on sapphire and IQE evaluation

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0325252

Authors: M. Ajmal Khan, Hideaki Murotani, Kaichi Tani, Satoshi Kurai, Narihito Okada, Mitsuhiro Muta, Yasushi Iwaisako, H. Hirayama, Yoichi Yamada

Institutions: RIKEN, National Institute of Technology, Tokuyama College, Yamaguchi University, Nippon Tungsten Co., Ltd. (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Awards: 窒化物半導体における励起子多体効果の発光デバイスへの応用可能性の検討, AlGaN系深紫外半導体レーザの発振機構解明と励起子利得による超低しきい値化

OpenAlex ID: W7161009912

FWCI: 2.451

Cites: 38

Cited by: 1

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