Work

Study on the synergistic effect of electrical bias and proton irradiation on the electrical performance degradation of β -Ga2O3 Schottky barrier diodes

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0327011

Authors: Shaozhong Yue, Huiping Zhu, Lei Shu, Jingyao Su, Tiexin Zhang, Siyuan Chen, Lei Wang, Xinyi Zhang, Jianhui Bu, Bo Li

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1020231493, G6626214918

OpenAlex ID: W7161021452

FWCI: 1.985

Cites: 32

Cited by: 2

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