Enhanced resistive switching performance via air-stable FA3Sb2I9 thin films for flexible and multilevel memory applications
Year: 2026
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0314151
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G3060738017
OpenAlex ID: W7161043373
