Work

Temperature-dependent carrier dynamics in red InGaN quantum wells revealed by cathodoluminescence

Year: 2026

Type: article

Abstract: In this work, we investigate carrier recombination dynamics and defect-related emission behavior in high-indium content InGaN platelets containing a single quantum well (QW) and a transition layer (TL) using temperature-dependent monochromatic cathodoluminescence (CL) imaging and time-resolved CL (TRCL). At low temperature, monochromatic CL imaging reveals expanded apparent emitting area of both layers and reduced effective width of dark lines associated with stacking mismatch boundaries, indicating suppressed non-radiative recombination and enhanced alloy-induced carrier localization. The TRCL data reveal distinct temperature-dependent carrier recombination mechanisms governing both layers. At low temperature, carrier localization supports longer lifetimes (τ) in the QW of about 1.4 ns and the TL displays multiple recombination channels due to its structural complexity. At room temperature, thermal carrier diffusion enables efficient capture by defects, resulting in pronounced τ quenching to about 0.22 and 0.07 ns in the two layers, respectively.

Source: Applied Physics Letters

DOI: 10.1063/5.0325290

Authors: Hira Usman, Zhaoxia Bi, Anders Gustafsson, Lars Samuelson

Institutions: Southern University of Science and Technology, Lund University, NanoLund

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Funder: Shenzhen Science and Technology Innovation Program

Award: G6237892341