Work

AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0331044

Authors: Chenshu Liu, Jianxun Liu, Xiujian Sun, Yayu Dai, Jie Wu, Qian Sun, Zhe Zhuang, Hui Yang

Institutions: Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Nanjing University, University of Science and Technology of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Science and Technology Program of Suzhou

Awards: G2130918107, G5315979992, G7241895887, G7587936312, G7873261117, G7915031597, G8651122748

OpenAlex ID: W7161064321

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Cites: 47

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