Work

MOCVD growth of p-GaN-gated N-polar GaN HEMT heterostructures

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0323680

Authors: Robert Hamwey, Tanmay Chavan, Boyu Wang, Stacia Keller, Umesh K. Mishra

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Office of Naval Research, Defense Sciences Office, DARPA

OpenAlex ID: W7161064630

FWCI: 2.475

Cites: 13

Cited by: 1

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