Work

A Dual-Si Atomic Precursor Enabling High-Quality SiN x Thin Films via Very High-Frequency Plasma Atomic Layer Deposition

Year: 2026

Type: article

Source: Chemistry of Materials

DOI: 10.1021/acs.chemmater.6c00586

Authors: Young-Jin Lim, Yujin Lee, Kim-Hue Thi Dinh, Min-Jeong Rhee, Yea-Ji Kim, Ngoc Le Trinh, Bonwook Gu, Youngho Kang, Jae Hack Jeong, Han-Bo-Ram Lee, Stacey F. Bent, Il-Kwon Oh

Institutions: Ajou University, Stanford University, Incheon National University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Ministry of Science and ICT, South Korea

Awards: G1055584748, G4100716105, G5849858383, G615549503, G7929573741, G8846863516

OpenAlex ID: W7161404010

FWCI:

Cites: 49

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