Study of the Dependence of Electrochemical Synthesis of Sb–Te thin Films on Electrolyte Concentration and Temperature.
Year: 2026
Type: article
Abstract: A number of studies have shown that tellurides are optimal semiconductor materials for use in thermoelectrics and in the fabrication of memory devices. In this study, antimony telluride, a widely used tellurium compound, was synthesized via electrochemical deposition from a citric acid-based electrolyte. Antimony telluride co-deposition was performed electrochemically, yielding thin films. The kinetics and formation mechanism of thin and nanostructured antimony telluride layers were studied using an IVIUMSTAT Electrochemical Interface potentiostat. The polarization pattern was analyzed, and it was established that the process occurs under concentration polarization conditions. The polarization pattern was examined using linear and cyclic polarization curves. Electrolytic solutions of varying concentrations were used, and it was found that homogeneous films with a stoichiometric composition and a smooth surface are formed from a solution with a 1:1 component ratio. The effect of electrolyte temperature on the reduction process was also studied. It was shown that as the electrolyte temperature increases, the reduction rate increases and films with different surface morphologies are formed. The most effective films were obtained at a temperature of 350 K. At higher temperatures, deterioration in adhesion and the formation of films with uneven surfaces are observed. The composition of the films obtained at the selected optimal electrolyte concentration was confirmed by X-ray phase analysis. It was found that the atomic ratio of elements in the composition of the obtained films is close to stoichiometric and corresponds to the compound Sb₂Te₃. Images of the film surface structure were obtained using a scanning electron microscope (SEM), confirming the nanostructured nature of the particles forming the film.
Source: Bulletin of Science and Practice
Authors: P. Quliyev, I. Agalarova, F. Gasımov, G. Tagiyeva
Institution: Nakhchivan State University
Language: Russian
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W7161410452