TeO2-modified SiO2-B2O3-Al2O3 glasses with enhanced dielectric constant and dissipation factor for advanced semiconductor packaging applications
Year: 2026
Type: article
Abstract: Recently, glass has emerged as a core substrate material for next-generation semiconductor packaging applications compared with organic substrates because of its low dielectric property, low coefficients of thermal expansion, and excellent scalability. In this study, we present new TeO 2 -modified alkaline-earth alumino-borosilicate glasses with enhanced dielectric and thermomechanical properties for advanced packaging applications. The effect of TeO 2 content on structural, thermomechanical, and dielectric properties of the glasses was systematically investigated. FTIR and XPS studies revealed enhanced polymerization of the glass network with increasing TeO 2 addition up to 2.0 mol%, as evidenced by a reduction in the Q 1 /Q 4 ratio. By substituting TeO 2 for SiO 2 up to 2.0 mol%, the dielectric constant (Dk) decreased from 4.582 to 4.458 at 40 GHz, but increased to 4.537 for further increases in TeO 2 (3.0 mol%). The dissipation factor (Df) also decreased from 3.93 to 3.73( ⋅ 10 −3 ) at 40 GHz upon TeO 2 substitution. Additionally, the incorporation of TeO 2 reduced the thermal expansion coefficient of the alumino-borosilicate glasses from 3.47 to 2.99( ⋅ 10 − 6 /K). These findings demonstrate that the TeO 2 -modified alumino-borosilicate glasses are promising alternative core substrate materials for advanced semiconductor packaging, with the potential to mitigate the limitations of organic substrates at high frequencies in AI and high-performance computing applications.
Source: Scientific Reports
Institution: Gwangju Institute of Science and Technology
Language: English
Subfield: Ceramics and Composites
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
Award: G3699837407
OpenAlex ID: W7161497547
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