Thick, low doped (001) gallium oxide drift layers at 100 mm via halide vapor phase epitaxy
Year: 2026
Type: article
DOI: 10.1116/6.0005421
Institution: Kyma Technologies (United States)
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funder: U.S. Air Force
Award: G8480400241
OpenAlex ID: W7161580249
