Carrier transport regulation empowers optimization and enhancement of thermoelectric figure of merit in Sn-doped Cu₃SbSe₄ thermoelectric materials
Year: 2026
Type: article
Abstract: Cu 3 SbSe 4 is a promising medium-to-low-temperature thermoelectric material, yet its performance is limited by suboptimal carrier transport, thermal conductivity trade-offs, and a narrow intrinsic bandgap. Herein, we employ a microwave-assisted synthesis combined with SPS to prepare single-phase Cu 3 Sb 1-x Sn x Se 4 via selective Sb-site Sn doping. Structural analyses confirm Sn⁴⁺ successfully substitutes Sb⁵⁺ to form stable solid solutions without secondary phases. The x = 0.04 sample achieves a room-temperature electrical conductivity of 358 S·cm⁻¹ (185.5% higher than undoped) and a peak ZT of 0.51，, driven by optimized carrier transport. The anomalous increase in lattice thermal conductivity observed in the heavily doped regime is rationally interpreted by considering defect rearrangement and the contribution of grain boundary thermal conductance. This study elucidates the carrier transport modulation mechanism in Sn-doped Cu 3 SbSe 4 , providing a viable strategy for the design of high-performance Cu 3 SbSe 4 -based thermoelectric materials for low-to-medium temperature applications. • A single-phase solid solution free of impurities was prepared by combining microwave-assisted synthesis with spark plasma sintering (SPS) technology. • Sn doping optimizes carrier transport and clarifies the anomalous lattice thermal conductivity evolution. • This study offers theoretical/practical guidance for optimizing Cu 3 SbSe 4 -based thermoelectrics for mid-to-low temperature use.
Source: Materials Today Communications
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,830
Awards: G2735647710, G4924534435, G7551306492
OpenAlex ID: W7161634764