Work

Fabrication and Resistive Switching Characteristics of Sol–Gel-derived SrBi₄Ti₄O₁₅ Memory Devices

Year: 2026

Type: article

Abstract: In this study, SrBi₄Ti₄O₁₅ (SBT) thin films were deposited on TiN/Si substrates by the sol-gel method, forming a metal-insulator-metal (MIM)-structured resistive random access memory (RRAM) device.Subsequently, rapid thermal annealing (RTA) was employed to improve the crystallinity and repair surface defects through lattice reorganization.An aluminum (Al) top electrode was then deposited by physical vapor deposition (PVD) to complete the MIM structure.The surface morphology of the SBT insulating layer was characterized using a field-emission scanning electron microscopy (FE-SEM) system, while the current-voltage (I-V) characteristics were measured using a precision source/measure unit (Keysight B2902A) to investigate the resistive switching behavior and underlying carrier transport mechanisms.

Source: Sensors and Materials

DOI: 10.18494/sam6103

Authors: Wen-Lung Lee, Kai-Huang Chen, Ming-Cheng Kao, Shen-Feng Lin

Institution: Cheng Shiu University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $748

Funders: National Science Council, National Science and Technology Council