A Non‐Volatile Heterogeneous Quantum Dot III‐V/Si DFB Laser With Optical Memristive Behavior
Year: 2026
Type: article
Abstract: ABSTRACT In this work, we introduce a non‐volatile heterogeneous quantum dot (QD) III‐V/Al 2 O 3 /Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O‐band (∼1300 nm) with a threshold current density of 234 A/cm 2 and a side‐mode suppression ratio exceeding 48 dB. Co‐integrated Al 2 O 3 ‐based memristors produce bipolar resistive switching, yielding non‐volatile wavelength shifts of ∼46 pm and ∼ 17 dB peak power contrast with zero static holding power. The III‐V/Al 2 O 3 /Si heterojunction memristor I – V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable wavelength division multiplexing (WDM) applications.
Source: Advanced Physics Research
DOI: 10.1002/apxr.70215
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
Awards: G135002022, HEWLETT PACKARD ENTERPRISE- NEW OPEN 2018 AWARD
CONTROL #:1858-2752
PROJECT TITLE: ''ULTRA-ENERGY-EFFICIENT INTEGRATED DWDM OPTICAL INTERCONNECT''
HEWLETT PACKARD ENTERPRISE WILL DEVELOP A HIGH-RISK BUT DISRUPTIVE TECHNOLOGY TO DEMONSTRATE A FULLY INTEGRATED SILICON-BASED OPTICAL TRANSCEIVER TECHNOLOGY TO ACHIEVE >1000 GB/S (1 TB/S) DATA TRANSMISSION WITH UNPRECEDENTED ENERGY CONSUMPTION OF >1/5 PJ/BIT.
OpenAlex ID: W7162110368