Work

High-Performance Top-Gate and Dual-Gate p-Type SnO Thin-Film Transistors Compatible with 350 °C Back-End-of-Line Processes

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.6c05108

Authors: Jialong Song, Yiwen Yao, Chaoran Dong, Jinlong Xiang, Peng Dai, Zening Gao, Yiming Wang, Yuxiang Li, Jiawei Zhang, Qian Xin, Aimin Song

Institutions: Shandong University, University of Manchester, Southern University of Science and Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology of Shandong Province, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China

Awards: G4673741603, G849391421, G969821533

OpenAlex ID: W7162137184

FWCI:

Cites: 52

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