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Temperature‐Dependent Modeling and Validation for Near‐ZCT Transients of High‐Voltage Field‐Stop IGBTs

Year: 2026

Type: article

Source: International Journal of Circuit Theory and Applications

DOI: 10.1002/cta.70493

Authors: Shuiyuan He, Ruiqi Ma, Chongshan Xie, Yunhao Guo, Jiepin Zhang, Yingtao Ma, Lijun Diao

Institutions: Beijing Jiaotong University, China Academy of Railway Sciences

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W7162188153

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Cites: 33

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