Work

Theoretical description of the energy flow mechanisms in photoexcited semiconductors

Year: 2026

Type: conference-paper

Abstract: In this work, we discuss some aspects of the density functional theory–based description of the energy transfer from photoexcited carriers to phonons, using the example of the energy transfer between photoexcited holes and phonons in Germanium. Recently, this approach allowed us to interpret the measured dynamics of the heating of Raman-active modes on a few-ps timescale in Ge, which was investigated with time-resolved Raman spectroscopy. We discuss in particular the limits of applicability of the widely used self-energy approximation, for the specific case of very hot carriers and of transient spectroscopy studies.

Source: Advances in Ultrafast Condensed Phase Physics

DOI: 10.1117/12.3099911

Authors: Raja Sen, Nathalie Vast, Jelena Sjakste

Institutions: Centre National de la Recherche Scientifique, École Polytechnique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire des Solides Irradiés, Institut Polytechnique de Paris

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7162428274

FWCI:

Cites: 19

Cited by:

Related to: 10