High breakdown field multi-kV UWBG AlGaN transistors
Year: 2026
Type: article
Abstract: We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (∼960 mA/mm) and a large breakdown field (>4.8 MV/cm) in high carrier density (1.15 × 1013 cm−2). Multi-kV robustness is successfully demonstrated, exhibiting 1.28 and 2.17 kV by utilizing a gate-connected field plate structure in 3.9 and 6.8 μm LGD, corresponding to the extremely low specific on-resistance of 1.25 and 2.86 mΩ cm2, respectively. High RF performance is also achieved, providing fT and fMAX of 8.5 and 15 GHz, respectively, for 3.9 μm LGD. These results highlight UWBG AlGaN as a platform for both high-voltage RF and power applications.
Source: APL Electronic Devices
DOI: 10.1063/5.0337643
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W7162467814