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Defect-free ultralong InAs nanowires Au-catalyzed growth on graphene/Ge by molecular beam epitaxy

Year: 2026
Type: article
Abstract: The self-catalyzed growth of InAs nanowires (NWs) on graphene is achievable but typically yields short, thick NWs with frequent stacking-fault defects. In this work, we demonstrate the successful synthesis of defect-free, ultralong InAs NWs by harnessing the synergistic effects of graphene and an Au catalyst. The distinct roles of graphene and Au in promoting the growth of high-quality NWs were systematically elucidated. Atomic resolution scanning transmission electron microscopy (STEM) imaging revealed that the Au-catalyzed InAs NWs grown on graphene predominantly exhibit defect-free wurtzite structures, whereas a small portion of nanosheets and the NWs grown atop them display defect-free zinc blende phases. Based on these observations, a growth model for Au-catalyzed InAs NWs on defective graphene/Ge surfaces was proposed.
DOI: 10.1088/1361-6528/ae7380
Authors: Zifan Huo, Yanhui Zhang, Haitao Jiang, Liuyan Fan, Ziteng Zhang, Can Zhou, Yajie Wang, Changlin Zheng, Xiaohao Zhou, Zezhong Chen, Pingping Chen, Wei Lu
Institutions: University of Shanghai for Science and Technology, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, University of Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, Fudan University, ShanghaiTech University
Language: English
Open Access status: hybrid
Estimated APC paid: $3,325
OpenAlex ID: W7162502771
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Cites: 30
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