Polarization‐Enabled Piezoelectric Tellurium–Selenium (Te x Se 1– x ) Thin Films for Memory Switching and Artificial Synaptic Functions
Year: 2026
Type: article
Abstract: ABSTRACT Two‐dimensional materials with piezoelectricity and polarization‐enabled electromechanical responses provide a promising basis for multifunctional electronics, including memory devices and neuromorphic computing. In this work, we explore cryogenic physical vapor deposition (cryogenic PVD)–grown Te x Se 1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry, and examine their polarization‐associated electromechanical characteristics. A 10 nm Te 0.9 Se 0.1 film exhibits a clear switchable electromechanical response with a piezoelectric coefficient d 33 of 33 pm/V, together with stable piezoresponse under ambient conditions. Introducing a Se ratio of 0.1 is found to enhance the polarization behavior and domain response while maintaining the crystalline quality of the Te x Se 1‐x films. Memory devices based on Te 0.9 Se 0.1 show retention beyond 2000 s and remain switchable up to 1000 cycles, with an HRS/LRS ratio exceeding 10 2 under ± 20 V program/erase pulses when read at a drain voltage of 1 V. In addition, synaptic behavior is demonstrated with 92% image recognition accuracy at low energy consumption, suggesting potential for neuromorphic applications. These results highlight the potential of Te x Se 1‐x films as a polarization‐enabled piezoelectric semiconductor system for future low‐power memory and computing applications.
Source: Advanced Science
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,730
OpenAlex ID: W7162526904