Negative photoconductivity and infrared quenching effects in rare-earth-doped n-InSe
Year: 2026
Type: article
Abstract: The features of negative photoconductivity (NPhC), background illumination-induced impurity photoconductivity (IIP), and optical quenching of intrinsic photoconductivity in pure and rare-earth elements (REEs)-doped n-InSe crystals were studied in order to identify new possibilities for practical application in optoelectronics. At low concentrations ([Formula: see text] at.%), REEs influence the degree of spatial inhomogeneity in the studied samples without inducing intra-center effects, which at higher concentrations can significantly affect their electrical, luminescent, and photoelectric properties. This research focuses on REEs such as holmium (Ho) and erbium (Er), introduced at varying concentrations ([Formula: see text]–10[Formula: see text] at.%) into n-InSe crystals (n-InSe[Formula: see text]Ho[Formula: see text] and n-InSe[Formula: see text]Er[Formula: see text]). This selection of materials enables a comparative analysis of the experimental results to determine the dependence of the observed photoelectric phenomena on both the concentration and the chemical nature of the REE dopant. Based on a comprehensive set of experimental studies, the feasibility of developing highly sensitive, next-generation tandem infrared (IR) photodetectors has been demonstrated. These detectors, based on n-InSe[Formula: see text]Ho[Formula: see text] and n-InSe[Formula: see text]Er[Formula: see text] crystals with REE concentrations in the range [Formula: see text]at.%, operate effectively within the optical spectral ranges of 1.20–1.90[Formula: see text][Formula: see text]m and 2.00–3.60[Formula: see text][Formula: see text]m.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7162682863