Work

Substrate-Dependent Etching of Plasma-Deposited Carbon Films on Si and HfO 2 Tuned by C 4 F 8 /CH 4 Gas Ratio

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c02723

Authors: Woojin Park, Solee Park, Youngjun Yoon, Heesu Lee, Gwang-Ho Lee, Se Youn Moon

Institutions: Jeonbuk National University, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Korea Basic Science Institute

Awards: G2908926859, G3655026037

OpenAlex ID: W7162682997

FWCI:

Cites: 66

Cited by:

Related to: