Optimization of Plasma Etching Process for 25:1 High Aspect Ratio Through‐Silicon Vias
Year: 2026
Type: article
Source: Contributions to Plasma Physics
DOI: 10.1002/ctpp.70140
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7162773432
