Work

Impact of Silicon Doping on the Structural and Electronic Properties of Amorphous Germanium Sulfide for Ovonic Threshold Switching Selector

Year: 2026

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.70194

Authors: Chong Qiao, Qundao Xu, Shaojie Yuan, Shengzhao Wang, Pei Gong, Songyou Wang, Ming Xu, Xiangshui Miao

Institutions: Nanyang Institute of Technology, Huazhong University of Science and Technology, Fudan University

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Henan Province

Awards: G1179151693, G2316096544

OpenAlex ID: W7162806042

FWCI:

Cites: 53

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