Post-Treated NiO x with 1-Dodecanethiol for Enhanced Interfaces in Inverted Perovskite Solar Cells
Year: 2026
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Nickel oxide (NiO x ) is widely recognized as an effective hole-transport layer for inverted perovskite solar cells (PeSCs); nevertheless, its performance is often hindered by the transformation of Ni 2+ to Ni 3+, which generates interfacial defect states and accelerates nonradiative recombination. To address this issue, we introduce a thiol-based interfacial passivation strategy using 1-dodecanethiol (DDTH) at the NiO x /perovskite junction. The strong coordination between thiol groups and nickel atoms forms robust Ni–S bonds, effectively passivating interfacial defects and stabilizing the NiO x surface. This interfacial modification suppresses nonradiative recombination, enhances hole extraction, and improves energy-level alignment across the interface. Consequently, DDTH-treated devices exhibit markedly improved charge transport and reduced interfacial losses. An optimized device incorporating 0.5 mg mL –1 DDTH achieves a power conversion efficiency (PCE) of 19.3% and retains 80% of its initial efficiency after 500 h of one-sun illumination at room temperature (≈27 °C), demonstrating markedly enhanced operational stability.
Source: ACS Applied Nano Materials
Institution: National Taipei University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Awards: G3408894192, G6961032890
OpenAlex ID: W7162933266
