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Mixed-Conduction Hall-Effect Analysis of High-Temperature Intrinsic Carrier Transport in p-Type Te-Doped Sn(Se 1– x Te x ) Polycrystals

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Year: 2026
Type: article
Source: The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.6c01470
Authors: Takayoshi Katase, Haoyun Zhang, Xinyi He, Shigenori Ueda, Toshio Kamiya
Institutions: Institute of Science Tokyo, Kanagawa Institute of Industrial Science and Technology, National Institute for Materials Science, SPring-8
Language: English

Topic: Advanced Thermoelectric Materials and Devices
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences

Open Access status: closed

Funders: Kanagawa Institute of Industrial Science and Technology, Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science
Awards: Engineering Nonequilibrium Phase Boundaries for Novel Functional Materials, G2448641503, G2451401391, Development and device demonstration of new ultra-widegap oxide semiconductors beyond the conventional design roule, Designing huge negative thermal expansion by lattice and magnetic mechanisms, Development of Mid-Infrared Inline Fiber-Optic Sensors, Exploration of angular momentum current science and its application to spin-orbit electronics, 14族混晶半導体におけるフォノンドラッグエンジニアリング
OpenAlex ID: W7162939474
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Cites: 33
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