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Low-K Replacement Process for AC Performance Improvement on 28nm High-K Metal Gate Platform

Year: 2026

Type: conference-paper

Source: China Semiconductor Technology International Conference (CSTIC)

DOI: 10.1109/cstic68613.2026.11537912

Authors: Huang Zhijian, Wang Changfeng, Meng Xiaoying, Xia Yu

Institution: Shanghai Huali Microelectronics (China)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W7163169955

FWCI:

Cites: 5

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Related to: 10