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The Impact of Drain Bias on Advanced High-k Metal-gate TDDB Reliability

Year: 2026

Type: conference-paper

Source: China Semiconductor Technology International Conference (CSTIC)

DOI: 10.1109/cstic68613.2026.11537451

Authors: Menghua Wang, Liyi He, Dan Yang, Shuanshe Chao, Xiao He, Na Mei, Keqing Ouyang

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7163204986

FWCI:

Cites: 4

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Related to: 10