Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
Year: 2026
Type: article
Abstract: Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe_{2} encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing.
Source: Physical Review Letters
DOI: 10.1103/245v-mgsb
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: Centre Informatique National de l’Enseignement Supérieur, Agence Nationale de la Recherche, Ministry of Education, Culture, Sports, Science and Technology, Indo-French Centre for the Promotion of Advanced Research, Grand Équipement National De Calcul Intensif, Japan Society for the Promotion of Science, Japan Science and Technology Agency, Core Research for Evolutional Science and Technology
OpenAlex ID: W7163673543