Work

Advances of high-speed GaN-based laser diodes for emerging applications

Year: 2026

Type: article

Source: Progress in Quantum Electronics

DOI: 10.1016/j.pquantelec.2026.100633

Authors: Zhenqian Gu, Zhen Yang, Fangnian Du, Dehuai Fan, Bohan Xiao, Junhui Hu, Haolin Jia, Shanshan Wang, Yunlong Pan, Junwen Zhang, Nan Chi, Anna Kafar, Piotr Perlin, Chao Shen

Institutions: Fudan University, Institute of High Pressure Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fudan University, Shanghai Municipal Commission of Economy and Informatization, Shanghai Rising-Star Program

Awards: G115698276, G2241890471, G2915870367, G3836604501, G6652922961

OpenAlex ID: W7163704837

FWCI: 2.379

Cites: 274

Cited by: 1

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