Work

Highly Operable Ferroelectric Tunnel Junctions via Domain-Engineered Ferroelectrics and Interfacial Oxide Control

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.6c00903

Authors: Sanghun Ha, Hyojin Yang, Sungho Park, Minwoo Kim, Dong Myong Kim, Junjong Lee, Dae Hwan Kim, Sung-Jin Choi, Yoon Jung Lee

Institutions: Kookmin University, Daegu Gyeongbuk Institute of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Awards: G3658926949, G972095545

OpenAlex ID: W7164932314

FWCI:

Cites: 50

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