Disentangling high harmonic generation from surface and bulk states of a topological insulator
Year: 2026
Type: article
Abstract: The discovery of topological phases has introduced a new dimension to materials science. Three-dimensional (3D) topological insulators (TIs) are a remarkable class of matter that is insulating in the bulk while hosting conductive topological surface states (TSSs) with unique charge and spin properties. High-order harmonic generation (HHG) has emerged as a powerful tool to probe condensed matter systems by providing insights into their electronic structure and dynamic behavior. Here, we investigate HHG in the prototype 3D-TI Bi2Se3. We demonstrate that the contributions of bulk and surface states to the harmonic emission can be controlled by tuning the thickness of thin film samples. An ultrathin (6 nm) film substantially enhances HHG from the surface states, while the bulk states dominate HHG in a thicker (50 nm) film. By applying a quasi-static terahertz perturbing field, we disentangle the bulk and surface responses and reveal the significant impact of the surface states’ shift vector and Berry curvature on HHG. Our study provides effective methods for isolating the optical responses of TSSs from those of the bulk, which opens the door to resolving an ongoing debate regarding whether it is possible to reliably extract topological signatures in HHG. Solid-state high-harmonic generation (HHG) provides a way to probe material structure. Here, the authors study HHG in the prototype three-dimensional topological insulator Bi2Se3, showing continuous control of band structure and unveiling concepts like shift vectors & Berry curvature on topological surface states.
Source: Nature Communications
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Awards: G1523888516, G222768804, G266914229, G3062877667, G311200948, G5956625161, COLLABORATIVE RESEARCH: ATOMISTIC STUDIES OF INDIVIDUAL IMPURITIES AND IMPURITY COMPLEXES IN III-V SEMICONDUCTORS, ATTOSECOND SCIENCE: GENERATION, METROLOGY AND APPLICATION, G6631512092, G7090116110, ATTOSECOND AND ULTRA-FAST X-RAY SCIENCE, Center for Emergent Materials, an NSF MRSEC, G8360166652, G8722205058
OpenAlex ID: W7164934940
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