Work

Analysis of Multifinger GaN HEMTs Using Gate Resistance Thermometry, Raman Thermometry, and Infrared Thermal Microscopy

Year: 2026

Type: article

Source: Journal of Electronic Packaging

DOI: 10.1115/1.4072184

Authors: Seokjun Kim, Daniel C. Shoemaker, Husam Walwil, Isaac Wildeson, Puneet Srivastava, Bill Zivasatienraj, Sukwon Choi

Institutions: Pennsylvania State University, BAE Systems (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Defense Advanced Research Projects Agency

Award: G8496189783

OpenAlex ID: W7165116175

FWCI:

Cites: 24

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