Year: 2026
Type: article
Abstract: This paper investigates the effect of gate dielectric structures on the low-voltage operation of solution-processed Diketopyrrolopyrrole-thienothiophene copolymer (DPP-DTT) organic thin-film transistors. Devices were fabricated using 300 nm SiO2, 100 nm SiO2, and 32 nm Al2O3 gate dielectrics. ODTS and ODPA self-assembled monolayers were introduced on the SiO2 and Al2O3 surfaces, respectively, to improve the semiconductor/dielectric interface. The device with 300 nm SiO2 operated at 100 V, showing an on/off current ratio of 1.93×105 and a mobility of 0.54 cm3 V-1 s-1. Reducing the SiO2 thickness to 100 nm lowered the operating voltage to 50 V and increased the mobility to 1.4 cm3 V-1 s-1. Notably, the 32 nm Al2O3-based device operated at only 5 V with an on/off ratio of 1.86×104. These results demonstrate that gate dielectric engineering is effective for low-power organic thin-film transistors.
DOI: 10.56767/jfpe.260007
Authors: Yongju Lee, Hyeok Kim
Institution: University of Seoul
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Awards: G1220079768, G3962194597, G8601599900
OpenAlex ID: W7165774563
FWCI:
Cites:
Cited by:
Related to: