Work

Strain-induced electronic and photocatalytic properties of MoSi 2 N 4 /SMoSiN 2 heterojunction

Year: 2026

Type: article

Source: Canadian Journal of Physics

DOI: 10.1139/cjp-2026-0074

Authors: Zheng Wang, Jianling Zhao, Ang Li, Xuerui Cheng, Chaosheng Yuan, JunYu Li, Shiquan Feng

Institutions: Zhengzhou University of Light Industry, Sichuan University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W7165804234

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Cites: 48

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