Work

Threshold Voltage Modulation and Performance Enhancement in Indium Gallium Zinc Oxide/hafnium Zirconium Oxide Ferroelectric Field-Effect Transistors via Interface Dipole Engineering

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.6c04205

Authors: Wangseop Lim, Ho Won Jang

Institutions: Seoul National University, Advanced Institute of Convergence Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Ministry of Science and ICT, South Korea

Awards: G2270502786, G861884029

OpenAlex ID: W7165892682

FWCI:

Cites: 47

Cited by:

Related to: