Work

Ultrahigh‐Performance Mix‐Structure Ga 2 O 3 /ZnO Heterostructure Solar Blind UV Detector and Its Wide Applications in Multiples of Scenarios Under Different Conditions

Year: 2026

Type: article

Abstract: ABSTRACT Practical application of solar‐blind UV (220–280 nm) detectors in multiples of fields is key problem in UV optoelectronic technology. Herein, the performance of mix‐structure Ga 2 O 3 /ZnO and mix‐structure Ga 2 O 3 /Ga doped ZnO hetero‐structure detectors are firstly optimized, optimized mix‐structure Ga 2 O 3 /ZnO detector possesses high response (3010.2 A/W@235 nm, 40 V), low I dark (6.97× 10 −11 A @40 V), high I UV /I dark ratio (10 5 at 4.8 µW/cm 2 235 nm) simultaneously. The mechanisms of the device under different conditions are explored. Avalanche breakdown mechanism induced fast response and decay speeds (t r : 0.38 µs: t d1 : 2.47 µs) at pulse UV laser in the device under high voltage, which favored its application in UV communications. Fast response and decay speeds of the device at faint 254 nm light (t r : 25.95 s: t d1 : 23.05 s), is beneficial for its application in missile alarm, electrical fire alarm, ozone alarm, and so on. Because of high density of Holes are trapped within the device under 1 V bias and faint deep UV condition, the mix‐structure Ga 2 O 3 /ZnO heterostructure detector presented good performance in simulating complicated PPF、LTP behavior of synapses in human brains and ANN. The difference response and recovery mechanism of the Ga 2 O 3 /ZnO hetero‐structure detector under different conditions, is especially meaningful in actual applications of the device in various scenarios.

Source: Small

DOI: 10.1002/smll.74335