Work

A fast-read, high-stability 12T hybrid TFET-FinFET SRAM cell with reduced control overhead and enhanced layout efficiency

Year: 2026

Type: article

Source: Microelectronics International

DOI: 10.1108/mi-11-2025-0238

Authors: S. Arman Sabaghpour, Behzad Ebrahimi, Pooya Torkzadeh

Institution: Islamic Azad University, Tehran

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7166091979

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Cites: 21

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