Experimental and numerical demonstration of threshold voltage asymmetry and synaptic plasticity in MoS2 transistors
Year: 2026
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0336116
Institutions: Universidad de Granada, Politecnico di Milano
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7166504364