Critical Role of In 2 O 3 Structure and Interface in Threshold Voltage and Mobility of Oxide Semiconductor FETs
Year: 2026
Type: article
Source: ACS Applied Electronic Materials
Authors: Shu-Jui Chang, Tsung-En Lee, Ching-Shuan Huang, Zih-Syuan Huang, Goutham Arutchelvan, Ta-Chuan Liao, Wen-Ling Lu, Yu-Chien Chiu, Che-Chi Shih, Qing Lin, Donglai Zhong, Hui-Ting Liu, Yu-Che Huang, Yen-Fa Liao, Nozomu Hiraoka, Chueh-Cheng Yang, Chia-Hsin Wang, Yi-Wei Tsai, Jhih-Min Lin, Shu-Chih Haw, Chih-Wei Hu, Shang-Jui Chiu, Claire Cheng, Chao-Hsin Chien, Wei-Yen Woon, Yu-Ming Lin, Chao-Ching Cheng, Iuliana Radu
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7166533969