Epitaxial layer to boost betavoltaic performance in SiC Schottky diodes
Year: 2026
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0322188
Institutions: Adelaide University, The University of Adelaide
Language: English
Subfield: Nuclear Energy and Engineering
Field: Energy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7166586637
